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| Datasheet File OCR Text: |
| NTE47 Silicon NPN Transistor High Gain, Low Noise Amp Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction-to-Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Note 1 RthJA is measured with the device soldered into a typical printed circuit board. Electrical Characteristics: (TA = +25C unless otherwise noted) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Colletor-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current ON Characteristics (Note 2) DC Current Gain hFE VCE = 5V, IC = 10A VCE = 5V, IC = 100A VCE = 5V, IC = 1mA VCE = 5V, IC = 10mA Collector-Emitter Saturation Voltage VCE(sat) VBE(on) IC = 10mA, IB = 0.5mA IC = 50mA, IB = 0.5mA Base-Emitter ON Voltage VCE = 5V, IC = 1mA 400 500 500 500 - - - 580 850 1100 1150 - 0.08 0.6 - - - - 0.2 0.3 0.7 V V V V(BR)CEO IC = 10mA, IB = 0, Note 2 V(BR)CBO IC = 100A, IE = 0 V(BR)EBO IE = 10A, IC = 0 ICBO VCB = 30V, IE = 0 45 45 6.5 - - - - 1.0 - - - 50 V V V nA Symbol Test Conditions Min Typ Max Unit Note 2 Pulse test: Pulse Width 300s, Duty Cycle 2.0% Electrical Characteristics: (TA = +25C unless otherwise noted) Parameter Small-Signal Characteristics Current Gain-Bandwidth Product Output Capaciatnce Noise Figure fT Cobo NF Symbol Test Conditions Min Typ Max Unit VCE = 5V, IC = 1mA, f = 100MHz VCB = 5V, IE = 0, f = 1MHz VCE = 5V, IC = 100A, RS = 10k, f = 10Hz to 15.7MHz VCE = 5V, IC = 100A, RS = 1.0k, f = 100Hz 100 - - - 160 1.7 0.5 4.0 - 3.0 1.5 - MHz pF dB dB .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max EBC .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max |
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